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IMAGE SENSOR
CCD area image sensor
S8665-0909
Four-stage thermoelectric cooled, back-thinned FFT-CCD
S8665-0909 is an FFT-CCD area image sensor featuring low noise and low dark current (MPP mode operation). The output charge can be integrated for long periods of time even at low light levels, allowing a wide dynamic range. S8665-0909 uses a four-stage thermoelectric cooler that cools the CCD down to -50 C when operated at room temperatures, achieving even lower noise and dark current.
Features
Applications
l Four-stage TE-cooled l Number of active pixels: 512 (H) x 512 (V) l Pixel size: 24 x 24 m l 100 % fill factor l Wide dynamic range l Low dark current l Low readout noise l MPP operation
l Astronomy l Scientific measuring instrument l UV imaging l For low-light-level detection requiring
I Selection guide
Type No. S8665-0909 Cooling Four-stage TE-cooled Number of total pixels 532 520 Number of active pixels 512 512 Active area [mm (H) x mm (V)] 12.288 12.288
I Specifications
Parameter CCD structure Fill factor Cooling Number of pixels Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Specification Full frame transfer 100 % Four-stage TE-cooled 532 (H) x 520 (V) 512 (H) x 512 (V) 24 (H) x 24 (V) m 12.288 (H) x 12.288 (V) mm 2 phase 2 phase One-stage MOSFET source follower 28 pin metal package AR coated sapphire
1
CCD area image sensor
I Absolute maximum ratings (Ta=25 C)
Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage
S8665-0909
Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V
Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H
Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10
Typ. -
I Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) High Vertical shift register clock voltage Low High Horizontal shift register clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low
Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL
Min. 18 11.5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9
Typ. 20 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8
Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7
Unit V V V V V V V V V V V V V
I Electrical characteristics (Ta=25 C)
Parameter Symbol Min. Typ. Signal output frequency fc Vertical shift register capacitance CP1V, CP2V 6,400 Horizontal shift register capacitance CP1H, CP2H 120 Summing gate capacitance CSG 7 Reset gate capacitance CRG 7 Transfer gate capacitance CTG 150 Charge transfer efficiency *1 CTE 0.99995 0.99999 DC output level *2 Vout 12 15 Output impedance *2 Zo 3 Power consumption *2 *3 P 15 *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: The values depend on the load resistance. (Typical, VOD=20 V, Load resistance=22 kW) *3: Power consumption of the on-chip amplifier.
Max. 1 18 -
Unit MHz pF pF pF pF pF V kW mW
2
CCD area image sensor
I Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
Parameter Symbol Remark Min. Saturation output voltage Vsat Vertical 150 *4 Full well capacity Fw Horizontal 300 *5 CCD node sensitivity Sv 1.8 +25 C Dark current *6 0 C DS (MPP mode) -30 C *7 Readout noise Nr Line binning *8 Dynamic range DR Area scanning Spectral response range l *9 Photo response non-uniformity PRNU *10 Point defect *11 Blemish Cluster defect *12 Column defect *4: Large horizontal full well capacity for line binning operation. *5: VOD=20 V, load resistance=22 kW. *6: Dark current nearly doubles for every 5 to 7 C increase in temperature. *7: -40 C, operating frequency is 80 kHz. *8: Dynamic range DR=Full well capacity/Readout noise *9: Measured at half of the full well capacity output. Photo response non-uniformity (PRNU) [%] = Typ. Fw x Sv 300 600 2.2 4,000 200 3 8 75,000 37,500 200 to 1100 -
S8665-0909
Max. 12,000 600 9 12 10 10 3 0 Unit V keV/ee-/pixel/s e-rms nm % -
Fixed pattern noise (peak to peak) x 100 Signal
*10: White spots > 3 % of full well at 0 C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels. *11: Continuous 2 to 9 point defects. *12: Continuous 10 point defects.
I Spectral response (without window) *13
100 90 (Typ. Ta=25 C) BACK-THINNED
I Dimensional outline (unit: mm)
PIN No. 1 1st PIN INDEX MARK 1.0 20.0 12.288 4.0 7.0
QUANTUM EFFICIENCY (%)
80 70 60
12.288
2 3
27 26
50 40 30 20 FRONT-ILLUMINATED 10 0 200 400 600 800 1000 1200 FRONT-ILLUMINATED (UV COAT)
0.46
PINCHED OFF TUBE 5.0 0.25
28
14
15
35.0
WAVELENGTH (nm)
KMPDB0058EA
47.0
*13: Spectral response with sapphire window is decreased by the transmittance
SAPPHIRE WINDOW
18.5 0.5
50.8
KMPDA0142EB
6.5 0.5
2.54
12 13
17 16
27.94
36.0
44.0
50.0
3
CCD area image sensor
I Dark current vs. temperature
10000 (Typ.)
S8665-0909
DARK CURRENT (e-/pixel/s)
1000
100
10
1
0.1 -50
-40
-30
-20
-10
0
10
20
30
TEMPERATURE (C)
KMPDB0037EB
I Device structure
THINNING
6
7
5
3
24
23
25
4 BEVEL THINNING
V
8
9
10
5 4 3 2 12345
H
22
21
11
12
13
18
19
20
V=512 H=512
4 BLANK
512 SIGNAL OUT
4 BLANK
8 BEVEL
4 BEVEL
KMPDC0075EB
4
4 BEVEL
512 SIGNAL OUT
CCD area image sensor
I PIN connections
Pin No. Symbol Description 1 PTE-cooler2 NC 3 SS Substrate (GND) 4 NC 5 ISV Test point (vertical input source) 6 IG2V Test point (vertical input gate-2) 7 IG1V Test point (vertical input gate-1) 8 RG Reset gate 9 RD Reset drain 10 OS Output transistor source 11 OD Output transistor drain 12 OG Output gate 13 SG Summing gate 14 P+ TE-cooler+ 15 TSH1 Temperature sensor (hot side) 16 TSC1 Temperature sensor (cool side) 17 TSC2 Temperature sensor (cool side) 18 P2H CCD horizontal register clock-2 19 P1H CCD horizontal register clock-1 20 IG2H Test point (horizontal input gate-2) 21 IG1H Test point (horizontal input gate-1) 22 ISH Test point (horizontal input source) 23 P2V CCD vertical register clock-2 24 P1V CCD vertical register clock-1 25 TG Transfer gate 26 NC 27 NC 28 TSH2 Temperature sensor (hot side) *14: TG is an isolation gate between vertical register and horizontal resister. In standard operation, the same pulse of P2V should be applied to the TG.
S8665-0909
Remark
Shorted to RD Shorted to 0 V Shorted to 0 V
Same timing as P2H
Shorted to 0 V Shorted to 0 V Shorted to RD Same timing as P2V *14
5
CCD area image sensor
I Timing chart Area scanning 1 (low dark current mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..519 520512 + 8 (BEVEL)
S8665-0909
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0119EA
Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, pfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
Remark *15 *15
-
Min. 6 200 500 10 500 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
6
CCD area image sensor
S8665-0909
Area scanning 2 (large full well mode)
INTEGRATION PERIOD (Shutter must be open) Tpwv 1 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG P1H Tpwh, Tpws ENLARGED VIEW 2 3 READOUT PERIOD (Shutter must be closed) 4..519 520512 + 8 (BEVEL)
P2H, SG RG OS
Tpwr
D1
D2
D3
D4 D18 D5..D12, S1..S512, D13..D17
D19
D20
KMPDC0120EA
Parameter Symbol Remark Pulse width Tpwv *16 P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh *16 P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG - P1H Overlap time Tovr *16: Symmetrical pulses should be overlapped at 50 % of maximum amplitude.
Min. 6 200 500 10 500 10 100 5 3
Typ. 50 50 -
Max. -
Unit s ns ns ns % ns ns % ns ns s
7
CCD area image sensor
I Specifications of built-in TE-cooler
Parameter Internal resistance Maximum current *17 Maximum voltage Maximum heat absorption *20 Symbol Rint Imax Vmax Qmax Condition Ta=27 C Th *18=27 C DT *19=DTmax Th*18=27 C DT=DTmax I=Imax Tc *21=Th *19=27 C I=Imax Min. -
S8665-0909
Max. 4.4 7.4 3.0 Unit W A V W
Typ. 1.6 -
Maximum temperature at hot side 50 C CCD temperature Ta=25 C -50 -30 C *17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler (Peltier element) and maintain stable operation, the supply current should be less than 60 % of this maximum current. *18: Temperature at hot side of thermoelectric cooler. *19: DT=Th - Tc *20: This is a theoretical heat absorption level that offsets the temperature difference in the Peltier element when the maximum current is supplied to the unit. *21: Temperature at cool side of thermoelectric cooler.
10 (Typ. Ta=25 C) V-I CCD TEMPERATURE - I 20
6
-20
4
-40
2
-60
0 0 1.0 2.0
-80 3.0
CURRENT (A)
KMPDB0222EA
I Specifications of built-in temperature sensors
Parameter Resistance at cool side Temperature coefficient of resistance at cool side Resistance at hot side Temperature coefficient of resistance at hot side Symbol Rc Rh Condition T=0 C T=0 C Min. Typ. 1,000 0.00375 1,000 0.00385 Max. Unit W W/W W W/W
8
CCD TEMPERATURE (C)
8
0
VOLTAGE (V)
CCD area image sensor
(Typ. Ta=25 C)
S8665-0909
1400 1200 1000 800 600 400 200 0 -100
RESISTANCE ()
-80
-60
-40
-20
0
20
40
TEMPERATURE (C)
KMPDB0108EA
I Precaution for use (electrostatic countermeasures)
G Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. G Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. G Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. G Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
I Element cooling/heating temperature incline rate
Element cooling/heating temperature incline rate should be set at less than 5 K/min.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1059E03
Feb. 2003 DN
9

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